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bzx84c2v4 ? bzx84c39 350mw surface mount zener diode features ! planar die construction l ! 350mw power dissipation a ! 2.4 ? 39v nominal zener voltage ! 5% standard vz tolerance ! designed for surface mount application b c ! plastic material ? ul recognition flammability classification 94v-o m e d h mechanical data ! case: sot-23, molded plastic k ! terminals: plated leads solderable per j mil-std-202, method 208 g ! polarity: see diagram ! weight: 0.008 grams (approx.) ! marking: device code (see table next page) top view maximum ratings @t a =25c unless otherwise specified characteristic symbol value unit peak pulse power dissipation at t a = 25c (note 1) p d 350 mw forward voltage @ i f = 10ma v f 0.9 v thermal resistance junction to ambient (note 1) r ja 357 c/w operating and storage temperature range t j , t stg -65 to +150 c note: 1. valid provided that device terminals are kept at ambient temperature. top view da t a sheet 2 5 9 7 , re v . ? sensitron semiconductor sot-23 dim min max min max a 0.37 0.51 0.014 0.020 b 1.19 1.40 0.047 0.055 c 2.10 2.50 0.083 0.098 d 0.89 1.05 0.035 0.041 e 0.45 0.61 0.018 0.024 g 1.78 2.05 0.07 0.081 h 2.65 3.05 0.104 0.120 j 0.013 0.15 0.0005 0.006 k 0.89 1.10 0.035 0.043 l 0.45 0.61 0.018 0.024 m 0.076 0.17 0.003 0.007 in mm in inch ?
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electrical characteristics @t a =25c unless otherwise specified zener voltage range (note 2) maximum zener impedance (note 3) max reverse leakage current v z @ i zt z zt @ i zt z zk @ i zk i r @ v r tem p . co ef f i - cient of zener vo l t ag e @ i zt mv / c typ e number (note 1) device marking code nom (v) min (v) max (v) ( )(ma)( )(ma)(a) (v) minmax bzx84c2v4 bzx84c2v7 bzx84c3 bzx84c3v3 w1 w2 w3 w4 2.4 2.7 3.0 3.3 2.28 2.5 2.8 3.1 2.56 2.9 3.2 3.5 100 100 95 95 5.0 5.0 5.0 5.0 600 600 600 600 1.0 1.0 1.0 1.0 50 20 10 5.0 1.0 1.0 1.0 1.0 -3.5 -3.5 -3.5 -3.5 0 0 0 0 bzx84c3v6 bzx84c3v9 bzx84c4v3 bzx84c4v7 w5 w6 w7 w8 3.6 3.9 4.3 4.7 3.4 3.7 4.0 4.4 3.8 4.1 4.6 5.0 90 90 90 80 5.0 5.0 5.0 5.0 600 600 600 500 1.0 1.0 1.0 1.0 5.0 3.0 3.0 3.0 1.0 1.0 1.0 2.0 -3.5 -3.5 -3.5 -3.5 0 0 0 0.2 bzx84c5v1 bzx84c5v6 bzx84c6v2 bzx84c6v8 w9 wa wb wc 5.1 5.6 6.2 6.8 4.8 5.2 5.8 6.4 5.4 6.0 6.6 7.2 60 40 10 15 5.0 5.0 5.0 5.0 480 400 150 80 1.0 1.0 1.0 1.0 2.0 1.0 3.0 2.0 2.0 2.0 4.0 4.0 -2.7 -2.0 0.4 1.2 1.2 2.5 3.7 4.5 bzx84c7v5 bzx84c8v2 bzx84c9v1 bzx84c10 wd we wf wg 7.5 8.2 9.1 10 7.0 7.7 8.5 9.4 7.9 8.7 9.6 10.6 15 15 15 20 5.0 5.0 5.0 5.0 80 80 100 150 1.0 1.0 1.0 1.0 1.0 0.7 0.5 0.2 5.0 5.0 6.0 7.0 2.5 3.2 3.8 4.5 5.3 6.2 7.0 8.0 bzx84c11 bzx84c12 bzx84c13 bzx84c15 wh wi wk wl 11 12 13 15 10.4 11.4 12.4 13.8 11.6 12.7 14.1 15.6 20 25 30 30 5.0 5.0 5.0 5.0 150 150 170 200 1.0 1.0 1.0 1.0 0.1 0.1 0.1 0.1 8.0 8.0 8.0 10.5 5.4 6.0 7.0 9.2 9.0 10 11 13 bzx84c16 bzx84c18 bzx84c20 bzx84c22 wm wn wo wp 16 18 20 22 15.3 16.8 18.8 20.8 17.1 19.1 21.2 23.3 40 45 55 55 5.0 5.0 5.0 5.0 200 225 225 250 1.0 1.0 1.0 1.0 0.1 0.1 0.1 0.1 11.2 12.6 14 15.4 10.4 12.4 14.4 16.4 14 16 18 20 bzx84c24 bzx84c27 bzx84c30 bzx84c33 wr ws wt wu 24 27 30 33 22.8 25.1 28 31 25.6 28.9 32 35 70 80 80 80 5.0 2.0 2.0 2.0 250 300 300 325 1.0 0.5 0.5 0.5 0.1 0.1 0.1 0.1 16.8 18.9 21 23.1 18.4 21.4 24.4 27.4 22 25.3 29.4 33.4 bzx84c36 bzx84c39 ww wx 36 39 34 37 38 41 90 130 2.0 2.0 350 350 0.5 0.5 0.1 0.1 25.2 27.3 30.4 33.4 37.4 41.2 note: 1. type numbers listed have standard tolerance on the nominal zener voltage of 5%. 2. measured with pulses t p = 5ms. 3. f = 1khz bzx84c2v4 ? bzx84c39 350mw surface mount zener diode da t a sheet 2 5 9 7 , re v . ? sensitron semiconductor
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0 10 20 30 40 50 01 2 3 4 5 6 7 8910 i , zener c urrent (ma) z v , zener voltage (v) fi g . 2 zener breakdown characteristics z t = 25c j c2v7 c3v3 c3v9 c4v7 c5v6 c6v8 c8v2 test current i 5.0ma z 0 2 4 6 8 10 10 20 30 40 50 60 70 80 90 100 i , zener current (ma) z v , zener voltage (v) fi g . 4 zener breakdown characteristics z tj = 25c test current i 2ma z c39 c43 c47 c51 c , junction cap acit ance (pf) j 10 100 1000 10 100 1 v , nominal zener voltage (v) fig. 5 junction capacitance vs nominal zener voltage z t = 25 c j v=1v r v=2v r v=1v r v=2v r 400 t , ambient temperature, (c) a fi g . 1 power deratin g curve p , power dissipation (mw) d see note 1 200 100 300 0 5 00 0 100 200 0 10 20 30 0 i , zener current (ma) z v , zener voltage (v) fi g . 3 zener breakdown characteristics z 10 20 30 40 t = 25c j test current i 5ma z test current i 2ma z c10 c12 c18 c22 c27 c33 c36 c15 bzx84c2v4 ? bzx84c39 350mw surface mount zener diode da t a sheet 2 5 9 7 , re v . ? sensitron semiconductor ?
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ordering information product no. ! !! ! package type shipping quantity bzx84cxx-t1 sot-23 3000/tape & reel bzx84cxx-t3 sot-23 10000/tape & reel p r o d ucts l i s t e d i n b o l d a r e s e n si t ro n p r e f e r r ed d e vice s . ! t1 suffix refers to a 7? reel. t3 suffix refers to a 13? reel. shipping quantity given is for minimum packing quantity only. for minimum order quantity, please consult the sales department. recommended footprint inches ( mm ) 0.035 (0.90) 0.031 (0.8) 0.035 (0.90) 0.079 (2.0) 0.037 (0.95) bzx84c2v4 ? bzx84c39 350mw surface mount zener diode da t a sheet 2 5 9 7 , re v . ? sensitron semiconductor ?
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? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron semiconductor technical data disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices t hat feature assured safety o r by means of users? fail-safe prec autions or other arrangement. 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datasheet(s). sensitron semiconducto r assumes no responsibility for any intellec tual property claims or any other problems that may result from applications of informatio n, products or circuits described in the d atasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any form , in whole or part, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations.

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